优势和特点
- Ultrawideband frequency range: 100 MHz to 40 GHz
- Attenuation range: 0.5 dB steps to 31.5 dB
- Bond pads for wire-bond and ribbon-bond
- Low insertion loss
- 1.7 dB up to 18 GHz
- 2.2 dB up to 26 GHz
- 3.2 dB up to 40 GHz
- Attenuation accuracy
- ±(0.10 + 2.0% of attenuation state) up to 26 GHz
- ±(0.13 + 1.5% of attenuation state) up to 35 GHz
- ±(0.30 + 1.5% of attenuation state) up to 40 GHz
- Typical step error
- ±0.12 dB up to 26 GHz
- ±0.30 dB up to 35 GHz
- ±0.60 dB up to 40 GHz
- High input linearity
- P0.1dB insertion loss state: 31 dBm
- P0.1dB other attenuation states: 28 dBm
- IP3: 50 dBm typical
- High RF input power handling: 26 dBm average, 31 dBm peak
- Tight distribution in relative phase
- No low frequency spurious signals
- SPI and parallel mode control, CMOS/LVTTL compatible
- RF settling time (0.1 dB of final RF output): 250 ns
- 18-terminal bond pads, 1.64 mm x 3.20 mm, Die-on-carrier
产品详情
The ADRF5473 is a 6-bit digital attenuator with 31.5 dB attenuation control range in 0.5 dB steps manufactured in a silicon process attached on a GaAs carrier substrate. The substrate incorporates the bond pads for chip-and-wire assembly, the device bottom is metalized and connected to ground.
This device operates from 100 MHz to 40 GHz with better than 3.2 dB of insertion loss and excellent attenuation accuracy. The ADRF5473 has a radio frequency (RF) input power handling capability of 26 dBm average and 31 dBm peak for all states.
The ADRF5473 requires a dual supply voltage of +3.3 V and -3.3 V. The device features serial peripheral interface (SPI), parallel mode control, and complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.
The ADRF5473 is designed to match a characteristic impedance of 50 欧姆.
APPLICATIONS
Test and instrumentationCellular infrastructure: 5G millimeter waveMilitary radios, radars, electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs)
